View Profile

• Ph.D. in High Frequency Solid State Devices from VNIT, Nagpur (2017- Aug.,2020)
• M. Tech. in Communication System Engg. from VNIT, Nagpur (2012-2014)
• B.Tech. in Electronics & Telecommunication Engineering from BPUT, Rourkela (2006-2010)

• June, 2022 to till date- Assistant Professor, IIIT Nagpur.
• August, 2021 to May, 2022- Adjunct Assistant Professor, IIIT Nagpur.
• August, 2020 to July, 2021- Assistant Professor, GHRCE, Nagpur.
• 2014 to 2017- Assistant Professor (on Contract), Govt. College of Engineering, Kalahandi, Bhawani Patna, Odisha.

Core:

• 3^rd Sem. (Analog ICs)
• 4^th Sem.  (Electromagnetics, Analog Comm. Lab)
• 1^st Sem. (Electronic Devices and Circuits, and Elements of Electrical Engg.)
• 2^nd Sem. (Digital Electronics)

Elective:

• 7^th/8^th Sem. (Satellite Communication, EMI-EMC)

Researcher Id: AAL-2209-2020   Scopus Id: 57201214417

Google Scholar Id: dB2FxUAAAAAJOrcid Id: 0000-0001-5515-8137

Link to IRINS/Vidwan Research profile: https://iiitn.irins.org/profile/229446

https://vidwan.inflibnet.ac.in/profile/229446

Area of Research

Graphene, Semiconductor Devices, Electronics Materials,Microwave Devices for 5G/6G communications, Wide bandgap semiconductors, including organic materials, and related heterostructures and devices, Nano electronics.

Reviewer for Journal 

• IEEE Electron Device Letters. (SCI)
• IET Electronics Letters. (SCI)
• International Journal of Electronics. (SCI, Taylor & Francis)
• Semiconductor Science and Technology. (SCI, IOP)
• International Journal of Num. Mod.: Electronics Networks, Devices and Field (SCI, Wiley)
• International Journal of Electronics Letters. (SCOPUS, T&F)
• Materials (SCI, MDPI)
• Sustainability (SCI, MDPI)

SCI/SCIE Journals:

11. Girish Chandra Ghivela, JoydeepSengupta, “The Promise of Graphene: A Survey of Microwave Devices based on Graphene,” IEEE Microwave Magazine, vol. 21, no. 2, pp. 48-65, Feb. 2020. (IEEE, SCIE, I.F.: 3.062, h-index: 83) DOI: https://doi.org/10.1109/ MMM.2019.2951967

10. Girish Chandra Ghivela, JoydeepSengupta, “Numerical Study of Magnetic Field Effect on Graphene based IMPATT Source,” Superlattices and Microstructures (Now Micro and Nanostructures), vol.137, pp. 1-7, Jan. 2020. (Elsevier, SCI, I.F.: 3.22, h-index: 80) DOI:https://doi.org/10.1016/j.spmi.2019.106365

9. Girish Chandra Ghivela, JoydeepSengupta, MonojitMitra, “Quantum Corrected Drift Diffusion based Noise Model for Impact Avalanche and Transit Time Diode,” Superlattices and Microstructures, vol. 128, pp. 402-407, Apr. 2019. (Elsevier, SCI, I.F.: I.F.: 3.22, h-index: 80) DOI:https://doi.org/10.1016/j.spmi.2019.02.012

8. Girish Chandra Ghivela, JoydeepSengupta, “Effect of acoustic phonon scattering on impact ionization rate of electrons in monolayer graphene nanoribbons,” Applied Physics A, vol. 124, Article no. 762, pp. 1-8, Nov. 2018. (Springer, SCI, I.F.: 2.983, h-index: 154) DOI:https://doi.org/10.1007/s00339-018-2193-1

7. Girish Chandra Ghivela, JoydeepSengupta, “Prospects of Impact Avalanche Transit Time Diode based on Chemical Vapor Deposited Diamond Substrate,” Journal of Electronic Materials, vol. 48, no. 02, pp. 1044-1053, Feb. 2019. (Springer, SCI, I.F.: 2.047, h-index: 102) (Published by Springer on behalf of IEEE Electron Devices Society and The Minerals, Metals and Materials Society) DOI:https://doi.org/10.1007/s11664-018-6821-5

6.  Girish Chandra Ghivela, JoydeepSengupta, “Noise Performance of Avalanche Transit Time Devices in the presence of acoustic phonons,” Journal ofComputational Electronics, Vol. 18, no. 1, pp. 222-230, Mar. 2019. (Springer, SCIE, I.F.: 1.983, h-index: 37) DOI:https://doi.org/10.1007/s10825-018-1289-3

5. Girish Chandra Ghivela, JoydeepSengupta, “Modeling and computation of double drift region transit time diode performance based on graphene‐SiC,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 32, no. 05, pp. 1-11, Sept. 2019. (Wiley, SCI, I.F.: 1.436, h-index: 31) DOI:https://doi.org/10.1002/jnm.2601

4. Girish Chandra Ghivela, JoydeepSengupta, “Computation of Quantum Corrected Noise in Graphene-SiC based Impact Avalanche Transit Time Diode,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 33, no. 5, pp. 1-7, Sep. 2020. (Wiley, SCI, I.F.: 1.436, h-index: 31) DOI: https://doi.org/10.1002/JNM.2743

3. Girish Chandra Ghivela, JoydeepSengupta, “Estimation of Power Density in IMPATT Using Different Materials,” International Journal of Electronics, vol. 107, no. 5, pp. 740-754, May 2020. (Taylor & Francis, SCI, I.F.: 1.336, h-index: 52), DOI: https://doi.org/10.1080/00207217.2019.1672810

2. Arunjith KS, Girish Chandra Ghivela, JoydeepSengupta, “Design and analysis of novel Tri-band band pass filter for GSM, WiMax and UWB applications,” Wireless Personal Communications, vol. 118, no. 6, pp. 3457–3467, Jun.2021. (Springer, SCIE, I.F.: 2.071, h-index: 65), DOI: 10.1007/s11277-021-08188-7

1. Girish Chandra Ghivela, JoydeepSengupta, “Space Charge Studies in Graphene based Avalanche Transit Time Devices,” Superlattices and Microstructures, vol. 155, pp. 1-8, July 2021, article no. 106899. (Elsevier, SCI, I.F.: 3.22, h-index: 80). DOI: 10.1016/j.spmi.2021.106899

SCOPUS Journals:

4. Girish Chandra Ghivela, JoydeepSengupta, MonojitMitra, “Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC-based IMPATT diode,” International Journal of Electronics Letters, vol. 7, no. 1, pp. 107-116, Mar. 2019. (Taylor & Francis, Scopus, h-index: 9) DOI: https://doi.org/10.1080/21681724.2018.1460869

3. Girish Chandra Ghivela, JoydeepSengupta, MonojitMitra, “Space Charge Effect of IMPATT diode using Si, Ge, GaAs, InP, WzGaN, 4H-SiC at Ka-Band,” IETE Journal of Education, vol. 58, no. 2, pp. 61-66, 2017. (Taylor & Francis) DOI: https://doi.org/10.1080/09747338.2017.1378132

2. J. Sengupta, G. C. Ghivela, A. Gajbhiye, M Mitra, “Measurement of noise and efficiency of 4H-SiC IMPATT diode at Ka-band,” International Journal of Electronics Letters, vol. 4, no. 2, pp. 134-140, Jun. 2016. (Taylor & Francis, Scopus, h-index: 9) DOI: https://doi.org/10.1080/21681724.2014.966774

1. S. J. Mukhopadhyay, Girish Chandra Ghivela, JoydeepSengupta, MonojitMitra, "Prospects and Potentiality of Diamond based DDR IMPATTs in THz Regime," International Journal of Electronics Letters, vol. 9, no. 1, pp. 36-46, Mar 2021.  DOI: https://doi.org/10.1080/21681724.2019.1661017(Taylor & Francis, Scopus, h-index: 9)

Book Chapters:                                    

3. G. C. Ghivela, S. J. Mukhopadhyay, J. Sengupta, M. Mitra, “Potentiality of Impact Avalanche Transit Time diode as Terahertz Source based on Group-IV and III-V semiconducting materials,” in A. Biswas et al. (eds) Emerging Trends in Terahertz Solid-State Physics and Devices, pp. 65-75, Mar 2020, Springer, Singapore. DOI: 10.1007/978-981-15-3235-1_5 (ISBN No. 978-981-15-3234-4)

2. G. C. Ghivela, and J. Sengupta, “Effects of Space Charges in IMPATT Source at Terahertz Regime,” in A. Biswas et al. (eds) Emerging Trends in Terahertz Engineering and System Technologies,Springer, Singapore. DOI: 10.1007/978-981-15-9766-4_2 (ISBN No. 978-981-15-9765-7)

1. B. Jothe, G. C. Ghivela, J. Sengupta, “Parasitic Series Resistance for 4H-SiC and Diamond Based IMPATT Diode at Ku band”, in VCAS 2018 presented at Motilal Nehru National Institute of Technology, Allahabad, 29^th Nov. 2018. (Appear In: Dutta D., Kar H., Kumar C., Bhadauria V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engg, vol 587. pp. 617-625, Dec. 2019, Springer, Singapore).DOI: https://doi.org/10.1007/978-981-32-9775-3_56 (WoS) (ISBN No. 978-981-15-6840-4)

International Conferences:

12. G. C. Ghivela, J. Sengupta, “Prospects of black phosphorous in transit time devices,” presented in VCAS 2022 at Motilal Nehru National Institute of Technology, Allahabad.

11. P. Kumar, G. C. Ghivela, J. Sengupta, Design and Analysis of Triple Band BPF Using Stub added Ring Resonator, 6th (IEEE) International Microwave and RF Conference (IMaRC) by the IEEE Microwave Theory and Techniques Society (MTT-S), at Kolkata, 28^th Nov. 2018,  pp. 1-4, doi: 10.1109/IMaRC.2018.8877319. Publication: 21 October 2019

10. G. C. Ghivela, P. Kumar, S. Tiwari, J. Sengupta, “Performance of 4H-SiC IMPATT Diode at Ka- and W-band with Temperature Variation”, presented in VCAS 2019, at Motilal Nehru National Institute of Technology, Allahabad, 28^th Oct. 2019. (Appeared in Lect. Notes Electrical Eng., David Harvey et al. (Eds): Advances in VLSI, Communication, and Signal Processing, 10.1007/978-981-15-6840-4_3, vol. 683, pp. 33-40, Oct 2020.

9. ChittiUday Lakshmi Amulya, Girish Chandra Ghivela, AmishaTurkel, SamruddhiMeshram, JoydeepSengupta, “DC Analysis of Black phosphorous based IMPATT diode”, presented at IEEE 1^st ICESIP 2019, IIITD&M, Kanchepuram on 04^th July 2019, pp. 1-3, doi: 10.1109/ICESIP46348.2019.8938346. Publication: 23 December 2019

8. Amit Kumar, Girish Chandra Ghivela, Sukanya Roy Choudhury, ArukalaSupriya, JoydeepSengupta, “A Steady State Analysis of Boron Nitride DDR IMPATT Diode”, presented at IEEE 1^st ICESIP 2019, IIITD&M, Kanchepuram on 04^th July 2019, pp. 1-4, doi: 10.1109/ICESIP46348.2019.8938381.  Publication: 23 December 2019

7. Nitin Dambhare, Girish Chandra Ghivela, JoydeepSengupta, “Microstrip Patch Antenna with PIN Diode as Frequency Selector for CR Applications” presented at ICAEEC 2019, IIIT, Allahabad on 31^st May 2019,Available atSSRN: https://ssrn.com/abstract=3574123 or http://dx.doi.org/10.2139/ssrn.3574123  Publication: 13 April 2020

6. Sharvari Holey, ShivaniNavsalkar, TanviDhande, MihikaDaga, Girish Ghivela and JoydeepSengupta, “A Spy Robot for Military Applications”, presented at JNEC, Royal University of Bhutan, Dewathang, 8-10 Mar. 2019.

5. K. Bramhapurikar, A. Prabhune, S. Chavan, G. C. Ghivela, J. Sengupta, A Wearable Posture Corrector Device, 9th (IEEE) ICCCNT, at IISC, Bengaluru, 10^th July. 2018, DOI: 10.1109/ICCCNT.2018.8493960  (WoS) Publication: 18 October 2018

4. P. Kumar, G. C. Ghivela, J. Sengupta, Design and Analysis of Dual-band Circular Patch Antenna for IoT Application, 15th IEEE India Council International Conference (INDICON 2018) organized by the IEEE Madras Section, presented at Amrita Vishwa Vidyapeetham, Coimbatore, 16^th Dec. 2018, pp. 1-4, doi: 10.1109/INDICON45594.2018.8987096. Publication: 16 March 2020

3. G. C. Ghivela, P. Kumar, J. Sengupta, “Numerical measurement of oscillating parameters of IMPATT using Group-IV and Group III-V materials,” presented in VCAS 2018 at Motilal Nehru National Institute of Technology, Allahabad, 29^th Nov. 2018. (Appear In: Dutta D., Kar H., Kumar C., Bhadauria V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. pp. 405-412, Dec. 2019, Springer, Singapore). DOI: https://doi.org/10.1007/978-981-32-9775-3_37 (WoS)

2. P. Kumar, G. C. Ghivela, J. Sengupta, Design and Analysis of Multiple bands Spider Web shaped Circular Patch Antenna for IoT Application, 8th IEEE India International Conference on Power Electronics (IICPE-2018), at Malaviya National Institute of Technology, Jaipur, 13^th Dec. 2018. pp. 1-5, doi: 10.1109/IICPE.2018.8709444. (WoS) Publication: 09 May 2019

1. P. Kumar, G. C. Ghivela, J. Sengupta, Optimized N-Sided Polygon Shaped Microstrip Patch Antenna for UWB Application, 10th (IEEE) ICCCNT, at IIT Kanpur, 06^th July. 2019. pp. 1-7, doi: 10.1109/ICCCNT45670.2019.8944343 (WoS) Publication: 30 December 2019

• PhD.: Nil
• M. Tech.: Nil
• B.E. / B. Tech.: 02 Groups completed and 02 Groups on going

• Institute and Departmental NIRF committee member.
• Institute Co-coordinator, Hindi Rajbhasha.
• Member, Institute Level Anti Ragging Squad.
• Purchase and Maintenance Coordinator, ECE.
• 1^st Year Faculty Advisor (B.Tech ECE-IoT).

• Selected for ‘PhD initiative Program’ from IEEE Microwave Theory & Technique Society Sponsored (MTT-S) International Microwave and RF Conference (IMaRC) at IIT Bombay in Dec. 2019.
• Received Fellowship from MHRD, Government of India during M. Tech. and Ph.D. Programme.
• GATE (EC) qualified with percentile of 98.2, 95.5 and 91.15 in the year 2012, 2011 and 2014 respectively.
• Member, IEEE.